The MMBTH10-4LT1 is a single NPN RF transistor with a collector-emitter breakdown voltage of 25V and a collector-emitter saturation voltage of 500mV. It has a current rating of 4mA and a gain bandwidth product of 800MHz. The device is packaged in a SOT-23-3 package and is rated for operation between -55°C and 150°C. It is not RoHS compliant and contains lead.
Frequency800MHz
PackageSOT-23-3
Current Rating4mA
PolarityNPN
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Technical Specifications
Onsemi MMBTH10-4LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Current Rating | 4mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 800MHz |
| Gain Bandwidth Product | 800MHz |
| hFE Min | 120 |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 800MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBTH10-4LT1 Datasheet
Download the complete datasheet for Onsemi MMBTH10-4LT1 to view detailed technical specifications.
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