NPN RF Bipolar Junction Transistor in SOT-23-3 package. Features a 25V collector-emitter breakdown voltage and 4mA current rating. Offers a transition frequency of 800MHz with a minimum hFE of 120. Operates within a temperature range of -55°C to 150°C. This component is RoHS and Halogen Free, supplied on tape and reel.
Frequency800MHz
PackageSOT-23-3
Current Rating4mA
PolarityNPN
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Technical Specifications
Onsemi MMBTH10-4LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Current Rating | 4mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 800MHz |
| Gain Bandwidth Product | 800MHz |
| Halogen Free | Halogen Free |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Frequency | 800MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 800MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTH10-4LT1G Datasheet
Download the complete datasheet for Onsemi MMBTH10-4LT1G to view detailed technical specifications.
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