NPN RF BJT transistor in SOT-23-3 package, featuring a 25V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a 650MHz transition frequency and 60 minimum hFE gain. Operates within a -55°C to 150°C temperature range with 225mW maximum power dissipation. This RoHS and Halogen Free component is supplied on tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
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Technical Specifications
Onsemi MMBTH10LT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 25V |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 650MHz |
| Halogen Free | Halogen Free |
| Height | 1.11mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTH10LT3G Datasheet
Download the complete datasheet for Onsemi MMBTH10LT3G to view detailed technical specifications.
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