The MMBZ15VDLT3 is a silicon transient voltage suppressor diode with a maximum reverse voltage of 12.8V and a maximum non-repetitive peak reverse power dissipation of 40W. It has a nominal breakdown voltage of 15V and a maximum clamping voltage of 21.2V. The diode is available in a 3-pin TO-236AB package and has a maximum power dissipation of 0.225W. It is suitable for use in a variety of applications including overvoltage protection and transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
Onsemi MMBZ15VDLT3 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12.8 |
| Breakdown Voltage-Min | 14.3 |
| Non-rep Peak Rev Power Dis-Max | 40 |
| Clamping Voltage-Max | 21.2 |
| Breakdown Voltage-Nom | 15 |
| Breakdown Voltage-Max | 15.8 |
| Power Dissipation-Max | 0.225 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi MMBZ15VDLT3 Datasheet
Download the complete datasheet for Onsemi MMBZ15VDLT3 to view detailed technical specifications.
No datasheet is available for this part.