The MMBZ16VALT1G is a silicon transient voltage suppressor diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a unidirectional polarity and is available in a 3-terminal package. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The maximum reverse voltage is 13 volts, the minimum breakdown voltage is 15.2 volts, and the maximum non-repetitive peak reverse power dissipation is 40 watts. The clamping voltage is 23 volts and the maximum breakdown voltage is 16.8 volts. The power dissipation is 0.225 watts.
PolarityUNIDIRECTIONAL
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Technical Specifications
Onsemi MMBZ16VALT1G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 15.2 |
| Non-rep Peak Rev Power Dis-Max | 40 |
| Clamping Voltage-Max | 23 |
| Breakdown Voltage-Nom | 16 |
| Breakdown Voltage-Max | 16.8 |
| Power Dissipation-Max | 0.225 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi MMBZ16VALT1G Datasheet
Download the complete datasheet for Onsemi MMBZ16VALT1G to view detailed technical specifications.
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