The MMBZ27VALT3 is a unidirectional silicon transient voltage suppressor diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a nominal breakdown voltage of 27V and a maximum breakdown voltage of 28.35V. The diode can withstand a maximum non-repetitive peak reverse power dissipation of 40W and a maximum clamping voltage of 40V. It is packaged in a plastic, 3-pin TO-236 case.
PolarityUNIDIRECTIONAL
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Technical Specifications
Onsemi MMBZ27VALT3 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 22 |
| Breakdown Voltage-Min | 25.65 |
| Non-rep Peak Rev Power Dis-Max | 40 |
| Clamping Voltage-Max | 40 |
| Breakdown Voltage-Nom | 27 |
| Breakdown Voltage-Max | 28.35 |
| Power Dissipation-Max | 0.225 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Onsemi MMBZ27VALT3 Datasheet
Download the complete datasheet for Onsemi MMBZ27VALT3 to view detailed technical specifications.
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