N-channel enhancement mode silicon power MOSFET, SOT-223 package, featuring a 60V drain-source voltage and 1.5A continuous drain current. This surface-mount transistor offers a low drain-source on-resistance of 180 mOhm at 5V Vgs. With a 4-pin configuration including a tab, it operates across a wide temperature range from -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Onsemi MMFT3055ELT1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.57 |
| Seated Plane Height (mm) | 1.63 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 1.5A |
| Material | Si |
| Maximum Drain Source Resistance | 180@5VmOhm |
| Typical Gate Charge @ Vgs | 7@5VnC |
| Typical Input Capacitance @ Vds | 500@25VpF |
| Maximum Power Dissipation | 800mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MMFT3055ELT1 Datasheet
Download the complete datasheet for Onsemi MMFT3055ELT1 to view detailed technical specifications.
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