
Onsemi MMJT350T1G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 1.65mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.75W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -300V |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMJT350T1G to view detailed technical specifications.
No datasheet is available for this part.
