NPN bipolar power transistor in a SOT-223 surface mount package. Features a collector-emitter voltage (VCEO) of 30V, maximum collector current of 3A, and a transition frequency of 72MHz. Offers a minimum hFE of 85 and a maximum power dissipation of 3W. This lead-free, RoHS compliant component operates within a temperature range of -55°C to 150°C.
Onsemi MMJT9410T1G technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 72MHz |
| Gain Bandwidth Product | 72MHz |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.7W |
| RoHS Compliant | Yes |
| Transition Frequency | 72MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMJT9410T1G to view detailed technical specifications.
No datasheet is available for this part.
