Quad NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 500mA. Operates with a 300MHz transition frequency and a minimum hFE of 100. Packaged in a surface-mount SOIC case, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency300MHz
PackageSOIC
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MMPQ2222A technical specifications.
General
Package/Case
SOIC
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
350MHz
Height
1.5mm
hFE Min
100
Lead Free
Lead Free
Length
10mm
Max Breakdown Voltage
40V
Max Collector Current
500mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
4
Package Quantity
48
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Weight
0.143g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMPQ2222A Datasheet
Download the complete datasheet for Onsemi MMPQ2222A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.