The MMUN2111LT1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 250mV. It can handle a maximum collector current of 100mA and a maximum power dissipation of 246mW. The transistor is packaged in a surface mount SOT-23-3 package and has a height of 1.11mm. It operates over a temperature range of -55°C to 150°C and is not RoHS compliant.
PackageSOT-23-3
Voltage50V
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi MMUN2111LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Height | 1.11mm |
| hFE Min | 35 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 246mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 246mW |
| RoHS Compliant | No |
| Voltage | 50V |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMUN2111LT1 Datasheet
Download the complete datasheet for Onsemi MMUN2111LT1 to view detailed technical specifications.
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