PNP Bipolar Junction Transistor (BJT) with a SOT-23-3 package. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum DC current gain (hFE) of 80. Operates within a temperature range of -55°C to 150°C with a power dissipation of 246mW. This component is RoHS and Halogen Free, supplied in a 3000-piece tape and reel.
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
Power246mW
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Technical Specifications
Onsemi MMUN2134LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 246mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 246mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMUN2134LT1G Datasheet
Download the complete datasheet for Onsemi MMUN2134LT1G to view detailed technical specifications.
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