NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Voltage (VCEO) and a 600mA Max Collector Current. Offers a 250MHz Gain Bandwidth Product and a minimum hFE of 35. Packaged in a TO-92-3 through-hole mount configuration. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency250MHz
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi MPS2222RLRA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 35 |
| Lead Free | Contains Lead |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPS2222RLRA Datasheet
Download the complete datasheet for Onsemi MPS2222RLRA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
