NPN Bipolar Junction Transistor (BJT) for switching applications, housed in a TO-92-3 package with a 5.33mm body height. Features a 15V Collector-Emitter Voltage (VCEO) and a 300mA Max Collector Current. Operates with a 350MHz transition frequency and a minimum hFE of 30. Rated for 625mW power dissipation and a temperature range of -55°C to 150°C. Supplied on a 2000-piece tape and reel for through-hole mounting.
Frequency350MHz
PackageTO-92-3
Current Rating300mA
MountingThrough Hole
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Technical Specifications
Onsemi MPS3646RLRA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 300mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 350MHz |
| Gain Bandwidth Product | 350MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 350MHz |
| DC Rated Voltage | 15V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPS3646RLRA Datasheet
Download the complete datasheet for Onsemi MPS3646RLRA to view detailed technical specifications.
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