NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 170MHz transition frequency and a minimum hFE of 120. Packaged in a TO-92-3 through-hole mount configuration, this RoHS compliant component operates from -55°C to 150°C.
Frequency170MHz
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
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Technical Specifications
Onsemi MPS4124G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 170MHz |
| Gain Bandwidth Product | 170MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625W |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS4124G Datasheet
Download the complete datasheet for Onsemi MPS4124G to view detailed technical specifications.
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