NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 250 and a maximum collector-emitter saturation voltage of 500mV. Operates across a temperature range of -55°C to 150°C with a power dissipation of 625mW. Designed for through-hole mounting.
PackageTO-92
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPS6515 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4V |
| Height | 5.33mm |
| hFE Min | 250 |
| Length | 5.2mm |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| DC Rated Voltage | 25V |
| Weight | 0.201g |
| Width | 4.19mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi MPS6515 Datasheet
Download the complete datasheet for Onsemi MPS6515 to view detailed technical specifications.
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