NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 2A. Offers a minimum DC current gain (hFE) of 75 and a transition frequency of 75MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Packaged in bulk, this RoHS compliant component is supplied in quantities of 5000 units.
Onsemi MPS651G technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| Height | 0.21inch |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 0.204inch |
| Max Collector Current | 2A |
| Max Frequency | 75MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | 60V |
| Width | 0.165inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPS651G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
