The MPS6562_D75Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 1A. It is packaged in a TO-92-3 package and is suitable for use in applications up to 60MHz. The transistor has a minimum current gain of 50 and a maximum power dissipation of 625mW. It is RoHS compliant and has an operating temperature range of -55°C to 150°C.
Frequency60MHz
PackageTO-92-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi MPS6562_D75Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 60MHz |
| Gain Bandwidth Product | 60MHz |
| hFE Min | 50 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS6562_D75Z Datasheet
Download the complete datasheet for Onsemi MPS6562_D75Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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