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Technical Specifications
Onsemi MPS6602G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS6602G Datasheet
Download the complete datasheet for Onsemi MPS6602G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.