PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Through-hole mounting and RoHS compliant.
Frequency100MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi MPS6652RLRAG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPS6652RLRAG Datasheet
Download the complete datasheet for Onsemi MPS6652RLRAG to view detailed technical specifications.
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