
PNP Bipolar Junction Transistor, TO-92-3 package, through-hole mount. Features 60V collector-emitter voltage (VCEO) and 60V breakdown voltage. Offers a maximum collector current of 2A and a minimum hFE of 75. Operates with a transition frequency of 75MHz and a maximum power dissipation of 625mW, suitable for -55°C to 150°C operating temperatures. Packaged on a 2000-piece tape and reel.
Onsemi MPS751-D26Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 75 |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Transition Frequency | 75MHz |
| Weight | 0.201g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPS751-D26Z to view detailed technical specifications.
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