PNP Bipolar Junction Transistor (BJT) for amplification, featuring a 60V Collector-Emitter Voltage (VCEO) and 60V Collector Base Voltage (VCBO). Offers a maximum collector current of 100mA and a minimum DC current gain (hFE) of 100. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This through-hole mounted component has a transition frequency of 150MHz and is packaged in bulk.
Frequency150MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi MPS8598 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPS8598 Datasheet
Download the complete datasheet for Onsemi MPS8598 to view detailed technical specifications.
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