NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features 80V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Supplied in bulk packaging.
Frequency100MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MPSA06G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.21inch |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 0.204inch |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| Width | 0.165inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA06G Datasheet
Download the complete datasheet for Onsemi MPSA06G to view detailed technical specifications.
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