The MPSA06RL1 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. It has a gain bandwidth product of 100MHz and a minimum current gain of 100. The transistor is rated for operation between -55°C and 150°C and has a maximum power dissipation of 625mW. It is available in a tape and reel packaging with 2000 units per reel.
Onsemi MPSA06RL1 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MPSA06RL1 to view detailed technical specifications.
No datasheet is available for this part.