NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a 625mW power dissipation and 500mA maximum collector current. This component offers an 80V collector-emitter voltage (VCEO) and 80V collector base voltage (VCBO), with a saturation voltage of 250mV. Operating across a temperature range of -55°C to 150°C, it boasts a transition frequency of 100MHz and a minimum hFE of 100. Packaged on a 2000-piece tape and reel, this lead-free and RoHS compliant transistor is suitable for small signal amplification applications.
Frequency100MHz
PackageTO-92-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MPSA06RLG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA06RLG Datasheet
Download the complete datasheet for Onsemi MPSA06RLG to view detailed technical specifications.
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