NPN bipolar junction transistor (BJT) in a TO-92 package. Features 80V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a minimum hFE of 100. Operates with a transition frequency of 100MHz and a power dissipation of 625mW. This lead-free, RoHS-compliant component is supplied in a box of 2000 units.
Onsemi MPSA06RLRMG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPSA06RLRMG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.