
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 400 and a transition frequency of 160MHz. Packaged in a TO-92-3 configuration for through-hole mounting. Maximum power dissipation is 625mW, with an operating temperature range of -55°C to 150°C.
Onsemi MPSA18RLRA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 80mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6.5V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 400 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 45V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MPSA18RLRA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
