NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 45V collector-emitter breakdown voltage and a 200mA maximum collector current. This transistor offers a minimum hFE of 400 and a transition frequency of 160MHz. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. The component is supplied in a box of 2000 units.
Frequency160MHz
PackageTO-92-3
Current Rating200mA
PolarityNPN
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Technical Specifications
Onsemi MPSA18RLRP technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 80mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6.5V |
| Frequency | 160MHz |
| Gain Bandwidth Product | 160MHz |
| hFE Min | 400 |
| Lead Free | Contains Lead |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 160MHz |
| DC Rated Voltage | 45V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSA18RLRP Datasheet
Download the complete datasheet for Onsemi MPSA18RLRP to view detailed technical specifications.
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