NPN bipolar junction transistor in a TO-92 package, featuring a collector-emitter breakdown voltage of 80V and a continuous collector current of 500mA. This through-hole component offers a high DC current gain (hFE) of 10000 minimum and a transition frequency of 200MHz. Maximum power dissipation is 625mW, with an operating temperature range from -55°C to 150°C.
PackageTO-92-3
Current Rating800mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSA28 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 80V |
| Weight | 0.201g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSA28 Datasheet
Download the complete datasheet for Onsemi MPSA28 to view detailed technical specifications.
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