NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 80V collector base voltage (VCBO). Offers a continuous collector current of 500mA and a minimum DC current gain (hFE) of 10000. Packaged in a TO-92-3 through-hole mount configuration with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSA28RLRP technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSA28RLRP Datasheet
Download the complete datasheet for Onsemi MPSA28RLRP to view detailed technical specifications.
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