NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector emitter voltage (VCEO) of 300V and a continuous collector current rating of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This RoHS compliant component is supplied on tape and reel.
Onsemi MPSA42RA technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
| Weight | 0.201g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPSA42RA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.