NPN bipolar junction transistor in a TO-92 package, featuring a 300V collector-emitter breakdown voltage and 500mA maximum collector current. This device offers a 50MHz transition frequency and a minimum hFE of 25. With a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C, it is RoHS compliant and lead-free.
Onsemi MPSA42RLRMG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPSA42RLRMG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.