NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V collector-emitter voltage (VCEO) and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 50MHz. Packaged in a TO-92-3 through-hole mount configuration, this lead-free component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency50MHz
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Onsemi MPSA43RLRAG technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA43RLRAG Datasheet
Download the complete datasheet for Onsemi MPSA43RLRAG to view detailed technical specifications.
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