
PNP Darlington transistor in TO-92 package, featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Designed for through-hole mounting, this component operates within a temperature range of -55°C to 150°C with a power dissipation of 625mW.
Onsemi MPSA55 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.201g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MPSA55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
