PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features an 80V collector-emitter voltage, 0.5A maximum collector current, and 625mW power dissipation. Offers a minimum DC current gain of 100 at 100mA and 10mA, with a minimum transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C.
Onsemi MPSA56 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.2(Max) |
| Package Width (mm) | 4.19(Max) |
| Package Height (mm) | 5.33(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-226-AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 4V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 625mW |
| Minimum DC Current Gain | 100@100mA@1V|100@10mA@1V |
| Maximum Transition Frequency | 50(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi MPSA56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.