PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features 80V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates with a maximum power dissipation of 625mW and is RoHS compliant.
Frequency50MHz
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Onsemi MPSA56RA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Weight | 0.201g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA56RA Datasheet
Download the complete datasheet for Onsemi MPSA56RA to view detailed technical specifications.
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