
PNP bipolar junction transistor in a TO-92 package, featuring a 30V collector-emitter breakdown voltage and a 1.2A maximum collector current. This device offers a high DC current gain (hFE) of 10000 minimum, with a collector-emitter saturation voltage of 1.5V. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW.
Onsemi MPSA63 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | -500mA |
| Current Rating | -1.2A |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 5.33mm |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -30V |
| Weight | 0.201g |
| Width | 4.19mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MPSA63 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.