PNP bipolar junction transistor in a TO-92 package, featuring a maximum collector current of 1.2A and a collector-emitter voltage of 30V. Offers a high DC current gain (hFE) of 50000 minimum, with a transition frequency of 100MHz. Designed for through-hole mounting, this component operates within a temperature range of -55°C to 150°C and has a power dissipation of 625mW.
PackageTO-92
Current Rating-1.2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi MPSA65 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -1.2A |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 50000 |
| Lead Free | Lead Free |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Series | MPSA65 |
| Termination | Through Hole |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Weight | 0.201g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi MPSA65 Datasheet
Download the complete datasheet for Onsemi MPSA65 to view detailed technical specifications.
No datasheet is available for this part.