PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector-emitter voltage (VCEO) of 200V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 25 and a transition frequency (fT) of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting.
Onsemi MPSA93 technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -200V |
| Weight | 0.201g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MPSA93 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.