The MPSH17 is a TO-92-3 packaged NPN RF transistor with a maximum collector-emitter breakdown voltage of 15V and a gain bandwidth product of 800MHz. It can handle a maximum power dissipation of 350mW and operates within a temperature range of -55°C to 150°C. The transistor has a minimum current gain of 25 and a collector-emitter saturation voltage of 500mV. It is available in bulk packaging with 2000 units per package.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSH17 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 15V |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 24dB |
| Gain Bandwidth Product | 800MHz |
| hFE Min | 25 |
| Max Breakdown Voltage | 15V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Transition Frequency | 800MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSH17 Datasheet
Download the complete datasheet for Onsemi MPSH17 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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