The MPSH17_D75Z is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 350mW. It operates in a through-hole mount configuration and has a transition frequency of 800MHz. The device is suitable for applications requiring a high current gain of 24dB. The MPSH17_D75Z is available in quantities of 2000 units, packaged in tape and reel format.
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSH17_D75Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Gain | 24dB |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 800MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSH17_D75Z Datasheet
Download the complete datasheet for Onsemi MPSH17_D75Z to view detailed technical specifications.
No datasheet is available for this part.