The MPSH24_D26Z is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a continuous collector current of 50mA. It operates at a maximum frequency of 400MHz and has a maximum power dissipation of 625mW. The transistor is suitable for through-hole mounting and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
Frequency400MHz
PackageTO-92-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MPSH24_D26Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| hFE Min | 30 |
| Max Collector Current | 50mA |
| Max Frequency | 400MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Transition Frequency | 400MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSH24_D26Z Datasheet
Download the complete datasheet for Onsemi MPSH24_D26Z to view detailed technical specifications.
No datasheet is available for this part.
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