NPN single bipolar junction transistor (BJT) for through-hole mounting. Features a 40V collector-emitter breakdown voltage and 50mA continuous collector current. Offers a minimum DC current gain (hFE) of 40 at 20mA, with a transition frequency of 500MHz. Maximum power dissipation is 625mW, operating from -55°C to 150°C. Packaged in TO-226-3, this lead-free and RoHS-compliant component is supplied in tubes.
Frequency500MHz
PackageTO-226-3
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi MPSH34 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 500MHz |
| Gain Bandwidth Product | 500MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 500MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Series | MPSH34 |
| Transition Frequency | 500MHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSH34 Datasheet
Download the complete datasheet for Onsemi MPSH34 to view detailed technical specifications.
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