NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, rated for 1W power dissipation. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 40V. Offers a minimum DC current gain (hFE) of 55 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C, is lead-free, and RoHS compliant.
Onsemi MPSW01ARLRPG technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 55 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MPSW01ARLRPG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.