NPN Bipolar Junction Transistor (BJT) in TO-226 package. Features a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 40V. Offers a transition frequency of 250MHz and a minimum DC current gain (hFE) of 60. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Designed for through-hole mounting.
Frequency250MHz
PackageTO-226
Current Rating1.2A
MountingThrough Hole
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Technical Specifications
Onsemi MPSW3725 technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 950mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 950mV |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Series | MPSW3725 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 40V |
| Weight | 0.25g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MPSW3725 Datasheet
Download the complete datasheet for Onsemi MPSW3725 to view detailed technical specifications.
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