The MPSW55G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 500mA. It has a maximum power dissipation of 1W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-92-3 package and is lead-free and RoHS compliant. It has a gain bandwidth product of 50MHz and a minimum current gain of 100.
PackageTO-92-3
Current Rating-500mA
PolarityPNP
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Technical Specifications
Onsemi MPSW55G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | MPSW55 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSW55G Datasheet
Download the complete datasheet for Onsemi MPSW55G to view detailed technical specifications.
No datasheet is available for this part.