Silicon NPN phototransistor, IR chip, with a 3-pin TO-18 metal package. Features a domed lens for top-view light detection, offering a maximum light current of 2000 µA (typical). This through-hole component operates from -55 °C to 125 °C with a maximum emitter-collector voltage of 5 V and collector-emitter voltage of 30 V. Maximum power dissipation is 250 mW.
PackageTO-18
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MRD3056 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-206-AA |
| Package/Case | TO-18 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.48 |
| Package Diameter (mm) | 5.84 |
| Package Material | Metal |
| Mounting | Through Hole |
| Phototransistor Type | Phototransistor |
| Type | IR Chip |
| Polarity | NPN |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Viewing Orientation | Top View |
| Maximum Light Current | 2000(Typ)uA |
| Lens Shape Type | Domed |
| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Dark Current | 100nA |
| Maximum Fall Time | 3500(Typ)ns |
| Maximum Power Dissipation | 250mW |
| Maximum Rise Time | 2000(Typ)ns |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541407080 |
| Schedule B | 8541407080 |
| ECCN | 3A001.a.2.c |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Onsemi MRD3056 Datasheet
Download the complete datasheet for Onsemi MRD3056 to view detailed technical specifications.
No datasheet is available for this part.