PNP Bipolar Junction Transistor (BJT) with a current rating of -100mA and a maximum collector current of 100mA. Features a collector-emitter voltage (VCEO) of 50V and a collector base voltage (VCBO) of 60V. Offers a DC rated voltage of -50V and a transition frequency of 80MHz. Packaged in an SC-59 3-lead surface mount package, this lead-free and RoHS compliant component operates within a temperature range of -55°C to 150°C. Power dissipation is rated at 200mW.
Frequency80MHz
PackageSC
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi MSA1162GT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSA1162GT1G Datasheet
Download the complete datasheet for Onsemi MSA1162GT1G to view detailed technical specifications.
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