The MSA1162YT1G is a PNP transistor with a collector base voltage of 60V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-236-3 case and is lead free.
PackageTO-236-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi MSA1162YT1G technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSA1162YT1G Datasheet
Download the complete datasheet for Onsemi MSA1162YT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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