NPN Bipolar Junction Transistor (BJT) in an SC package, designed for general-purpose amplification and switching applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Supplied in a 3000-piece tape and reel.
Frequency50MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi MSC2712GT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MSC2712GT1G Datasheet
Download the complete datasheet for Onsemi MSC2712GT1G to view detailed technical specifications.
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